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Growth of nonpolar and semipolar GaN on Silicon and sapphire substrates and investigation of optical processes for high efficiency – GASIOPHE
The objective of the current programme is to establish the growth protocol leading to the optimization of the growth of nonpolar and semipolar GaN on low-cost patterned silicon and sapphire substrates. This having been done we will grow in a second time, optoelectronic devices susceptible to emit in