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Plateforme FDSOI pour le node 11nm (FDSOI11)

Action : Equipements d'excellence

N° de convention : 10-EQPX-0030

Informations générales

  • Référence projet : 10-EQPX-0030
  • RST : Olivier FAYNOT
  • Etablissement Coordinateur : CEA Grenoble
  • Région du projet : Auvergne-Rhône-Alpes
  • Discipline : 2 - SMI
  • Aide allouée : 9 991 360 €
  • Date de début du projet : 22/02/2011
  • Date de fin du projet : 31/12/2019
  • Site web du projet : Pas de site Web
  • Mots clés : Microélectronique;CMOS;FDSOI

Résumé du projet

The goal of the EQUIPEX FDSOI was to increase the international leadership of CEA-LETI  and Grenoble area in the development of advanced Fully Depleted SOI (FDSOI) technologies. One of the main challenge of the sub 20nm FDSOI technlogy generations is to manage ultra thin layers (less than 10 nanometer) all along the wafer processing.  To this aim, 2 equipments have been installed in the frame of the EQUIPEX; 1 equipment from Dai Nippon Screen (DNS) for the chemical cleaning, etching, resist stripping, and preparation treatments of the wafer during their process cycling, and able to perform all these operations with a very low Silicon consomption. 1 equipment from APPLIED MATERIALS for the Physical Vapor Deposition (PVD) of metallic films and alloys needed for advanced silicide and contact layers. These 2 equipments have been installed in 2012 and are fully operational since this date. Advanced processes required for sub 20nm FDSOI devices, vertical stacked transistors and stacked nanowires have been developed such as new Ni-based salicide process (NiPt, NiCo, NiCoW metallurgy, ultra-selective Hot SPM (Sulfuric Peroxide Mixture) removal of unreacted NiX alloys during silicide realization and post etch cleaning), new low contact resistance metallurgy,  new selective wet removal and cleaning processes of Silicon Nitride and TiN Hard Mask, and optimized TMAH etching for polysilicon gate removal  in the “gate last” integration flow. The EQUIPEX FDSOI contributes greatly to the worldwide diffusion of FDSOI and by the way to the success of SOITEC, which produces the SOI substrates, and ST Microelectronics, which has been the first IC maker to industrialize this technology and has licensed it to IC maker such as SAMSUNG and GLOBAL FOUNDRIES.

(L'auteur de ce résumé est le coordinateur du projet, qui est responsable du contenu de ce résumé. L'ANR décline par conséquent toute responsabilité quant à son contenu.)