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ANR funded project

Micro et nanotechnologies pour l’information et la communication (DS0710) 2015
Projet ULYSSES

Quantum and classical light emitters in silicon: Impurities and complex defects for nanophotonics

The ULYSSES project aims at exploring a novel approach based on complex point defects in silicon-based devices for the fabrication of bright light sources. More specifically, in analogy to the phenomenal development of Nitrogen-Vacancy (NV) centers in diamonds, we intend to study G-centers in silicon for the implementation of quantum light sources, lasers and diodes. Our methodology relies on spatially-selective and broad-areas implantation of impurities (such as carbon ions) in silicon-based nanostructures (thin slabs, SiGe-based nanocrystals, and photonic structures) in order to fabricate (i) bright emitters such as LEDs and lasers when ultra-high G-centers densities are used (acting as classical light sources in the prospect of on-chip and out-of chip optical communications), and (ii) down to a single G-center for the demonstration of a quantum light source in silicon (in the prospect of quantum information protocols with photon-encoded quantum bits).

Partners

IM2NP Institut des matériaux de microélectronique et des nanosciences de Provence

NSSP-Leipzig Institut für Experimentelle Physik II

L2C Laboratoire Charles Coulomb

ANR grant: 457 600 euros
Beginning and duration: décembre 2015 - 42 mois

 

ANR Programme: Micro et nanotechnologies pour l’information et la communication (DS0710) 2015

Project ID: ANR-15-CE24-0027

Project coordinator:
Monsieur MARCO ABBARCHI (Institut des matériaux de microélectronique et des nanosciences de Provence)

 

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The project coordinator is the author of this abstract and is therefore responsible for the content of the summary. The ANR disclaims all responsibility in connection with its content.