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Centre d'Excellence sur les Antimoniures (EXTRA)

Action : Equipements d'excellence

N° de convention : 11-EQPX-0016

Informations générales

  • Référence projet : 11-EQPX-0016
  • RST : Eric TOURNIÉ
  • Etablissement Coordinateur : Université de Montpellier
  • Région du projet : Occitanie
  • Discipline : 2 - SMI
  • Aide allouée : 4 204 520 €
  • Date de début du projet : 01/07/2012
  • Date de fin du projet : 31/12/2019
  • Site web du projet : http://www.ies.univ-montp2.fr/edr/nanomir/index.php/fr/33-extra
  • Mots clés : antimonides; semiconductor;epitaxy;optoelectronics;infrared;sensors;nanotechnology

Résumé du projet

The aim of EXTRA (Excellence center on antimonides) is to create a reference center on the antimonide III-V semiconductor technology, a technology particularly adapted to the development of infra-red (IR) optoelectronics for a variety of applications (gas sensing, photodetection, imaging, solar cells,…). The antimonide technology is based on GaSb, InAs, AlSb, InSb binary semiconductors and their alloys and heterostructures. EXTRA is essentially based on the research activity of the nanoMIR group (nanostructure devices for mid-IR) of Institut d’Electronique et des Systèmes, a joint research unit of University of Montpellier and CNRS (UMR 5214), and on Centre de Technologie en Microélectronique de Montpellier (CTM), a service lab from Université de Montpellier. nanoMIR is recognized as a world leader in the field of the antimonide technology. The grant has allowed to order and install 1 RIE-ICP etching tool, 1 X-ray diffractometer, 1 new molecular-beam epitaxy (MBE) cluster reactor, the upgrade of 1 MBE cluster reactor and 1 e-beam evaporation tool (chronological installation order). The most important equipment, the MBE reactors, has become available in 2015. In spite of EXTRA being a “young” equipment, we have achieved the following prominent results:  State-of-the-Art InAs/GaSb short-period superlattices for photodetection up to 12 µm (project funded by the European Space Agency), new GaSb-based heterostructures for non-linear optics (project funded by DGA), first GaSb-based laser diode grown on Si substrates and operating in continuous wave operation above room temperature in the telecom range (ANR project), first demonstration of a buried grating DFB laser in GaSb technology (ANR project), InAsSb-based plasmonic resonators adapted to sensing (ANR project), record quantum cascade laser (QCLs) performances achieved with the InAs/AlSb technology (ANR projects), demonstration of GaAs-based QCLs operating in the THz range up to 180 K.    

(L'auteur de ce résumé est le coordinateur du projet, qui est responsable du contenu de ce résumé. L'ANR décline par conséquent toute responsabilité quant à son contenu.)